IndiumV3, Main, Repository, bibRecord, 002B56

Influence of laser annealing on defect-related luminescence of InGaN epilayers

Identifieur interne : 002B56 ( Main/Repository ); précédent : 002B55; suivant : 002B57

Influence of laser annealing on defect-related luminescence of InGaN epilayers

Auteurs : RBID : Pascal:11-0258356

Descripteurs français

Pascal (Inist)
- Recuit faisceau laser, Défaut cristallin, Intensité intégrée, Distribution concentration, Répartition spatiale, Photoluminescence, Spectrométrie Auger, Microscopie force atomique, Gallium Indium Nitrure Mixte, Couche mince, Couche épitaxique, InGaN.

English descriptors

KwdEn :
- AES, Atomic force microscopy, Concentration distribution, Crystal defects, Epitaxial layers, Gallium Indium Nitrides Mixed, Integrated intensity, Laser beam annealing, Photoluminescence, Spatial distribution, Thin films.

Abstract

InGaN epilayers exhibiting strong defect-related sub-bandgap emission, which is undesirable in epilayers and quantum well structures designed for light-emitting diodes and laser diodes, have been studied by confocal photoluminescence spectroscopy, Auger electron spectroscopy, and atomic force microscopy. Inhomogeneous spatial distribution of band-edge luminescence intensity and comparatively homogenous distribution of defect-related emission are demonstrated. It is shown that laser annealing at power densities causing the increase of the temperature at the epilayer surface high enough for indium atoms to move to the surface results in suppression of the defect-related emission.

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Pascal:11-0258356

Le document en format XML

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<date when="2011">2011</date>
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<term>Gallium Indium Nitrides Mixed</term>
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<front><div type="abstract" xml:lang="en">InGaN epilayers exhibiting strong defect-related sub-bandgap emission, which is undesirable in epilayers and quantum well structures designed for light-emitting diodes and laser diodes, have been studied by confocal photoluminescence spectroscopy, Auger electron spectroscopy, and atomic force microscopy. Inhomogeneous spatial distribution of band-edge luminescence intensity and comparatively homogenous distribution of defect-related emission are demonstrated. It is shown that laser annealing at power densities causing the increase of the temperature at the epilayer surface high enough for indium atoms to move to the surface results in suppression of the defect-related emission.</div>
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Influence of laser annealing on defect-related luminescence of InGaN epilayers

Influence of laser annealing on defect-related luminescence of InGaN epilayers

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri